Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistorHUNG, S. C; CHEN, C. W; SHIEH, C. Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8024, issn 0277-786X, isbn 978-0-8194-8598-4, 80240P.1-80240P.12Conference Paper

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayersSHU, G. W; WU, P. F; LEE, Y. C et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 42, issn 0953-8984, L543-L549Article

W₂B-based ohmic contacts to n-GaNKHANNA, Rohit; PEARTON, S. J; REN, F et al.Applied surface science. 2005, Vol 252, Num 5, pp 1826-1832, issn 0169-4332, 7 p.Article

Si-doped IN_0.23GA_0.77N/GAN short-period superlattice tunneling contact layer used on InGaN/GaN laser diodeTUN, C. J; TU, R. C; SHEU, J. K et al.Proceedings - Electrochemical Society. 2004, pp 254-259, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Efficiency and Droop Improvement in GaN-Based High-voltage Light-Emitting DiodesWANG, C. H; LIN, D. W; CHI, G. C et al.IEEE electron device letters. 2011, Vol 32, Num 8, pp 1098-1100, issn 0741-3106, 3 p.Article

Effects of rapid thermal annealing on the structural properties of TiO₂ nanotubesLIN, J. Y; CHOU, Y. T; SHEN, J. L et al.Applied surface science. 2011, Vol 258, Num 1, pp 530-534, issn 0169-4332, 5 p.Article

Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxyPAN, C. J; TU, C. W; SONG, J. J et al.Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 112-116, issn 0022-0248, 5 p.Article

ZnO spintronics and nanowire devicesPEADON, S. J; NORTON, D. P; HEBARD, A. F et al.Proceedings - Electrochemical Society. 2005, pp 406-423, issn 0161-6374, isbn 1-56677-462-4, 18 p.Conference Paper

Ion beam damage-induced masking for photoelectrochemical etching of III-V semiconductorsCHI, G. C; OSTERMAYER, F. W. JR; CUMMINGS, K. D et al.Journal of applied physics. 1986, Vol 60, Num 11, pp 4012-4014, issn 0021-8979Article

Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor depositionHUNG, S. C; HUANG, P. J; CHAN, C. E et al.Applied surface science. 2009, Vol 255, Num 15, pp 6809-6813, issn 0169-4332, 5 p.Article

Self-assembled InN dots grown on GaN with an In_0.08Ga_0.92N intermediate layer by metal organic chemical vapor depositionFU, Y. K; KUO, C. H; TUN, C. J et al.Journal of crystal growth. 2008, Vol 310, Num 20, pp 4456-4459, issn 0022-0248, 4 p.Article

Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperaturesKUO, C. W; CHEN, C. M; KUO, C. H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64730U.1-64730U.7, issn 0277-786X, isbn 978-0-8194-6586-3, 1VolConference Paper

Optical properties in InGaN/GaN multiple quantum wells and blue LEDsSU, Y. K; CHI, G. C; SHEU, J. K et al.Optical materials (Amsterdam). 2000, Vol 14, Num 3, pp 205-209, issn 0925-3467Conference Paper

Investigation of wafer-bonded (Al_xGa_1-x)_0.5In_0.5P/GaP light-emitting diodesSHEU, J. K; SU, Y. K; CHANG, S. J et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 4, pp 248-252, issn 1350-2433Article

The microstructure of thin aluminum-copper (4,5%) films deposited by sputtering techniques = Microstructures de couches minces aluminium-4,5% cuivre déposées par des techniques de pulvérisationCHI, G. C; NAKAHARA, S.Materials letters (General ed.). 1984, Vol 2, Num 5A, pp 380-385, issn 0167-577XArticle

Hot carrier photoluminescence in InN epilayersYANG, M. D; CHEN, Y. P; SHU, G. W et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 90, Num 1, pp 123-127, issn 0947-8396, 5 p.Article

Applications of transparent Al-doped ZnO contact on GaN-based power LEDTUN, C. J; SHEU, J. K; PONG, B. J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61210X.1-61210X.8, issn 0277-786X, isbn 0-8194-6163-6Conference Paper

Characterization of GaN Schottky barrier photodiodes with a low-temperature GaN cap layerLEE, M. L; SHEU, J. K; SU, Y. K et al.Proceedings - Electrochemical Society. 2004, pp 260-269, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layerSHEU, J. K; KAO, C. J; LEE, M. L et al.Journal of electronic materials. 2003, Vol 32, Num 5, pp 400-402, issn 0361-5235, 3 p.Article

The doping process and dopant characteristics of GaNSHEU, J. K; CHI, G. C.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 22, pp R657-R702, issn 0953-8984Article

GaN electronics for high power, high temperature applicationsPEARTON, S. J; REN, F; CHANG, P et al.The Electrochemical Society interface. 2000, Vol 9, Num 2, pp 34-39, issn 1064-8208Article

Low-noise Ga_0.47In_0.53As photoconductive detectors using Fe compensationCHEN, C. Y; CHI, G. C.Applied physics letters. 1984, Vol 45, Num 10, pp 1083-1085, issn 0003-6951Article

X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy methodYANG, C.-C; WU, M.-C; LEE, C.-H et al.Journal of crystal growth. 1999, Vol 206, Num 1-2, pp 8-14, issn 0022-0248Article

Growth and characterization of GaN by atmosphere pressure metalorganic chemical-vapor deposition with a novel separate-flow reactorYANG, C.-C; HUANG, C.-K; CHI, G.-C et al.Journal of crystal growth. 1999, Vol 200, Num 1-2, pp 39-44, issn 0022-0248Article